- مبلغ: ۸۶,۰۰۰ تومان
- مبلغ: ۹۱,۰۰۰ تومان
In this paper, we explain the problem of dramatic OFF-state leakage in junctionless tunnel field effect transistor (JLTFET) for a channel thickness greater than 10 nm. In JLTFET, with channel width greater than 10 nm, the depletion region primarily remains confined below the dielectric–semiconductor interface. Hence, we tend to incur significant leakage through the center of the device. With the help of 2D device simulations, we demonstrate that the cause of the leakage current is predominantly due to thermal injection in the source region and is concentrated through the center of the device. We suggest a technique of using a lightly doped source region, below the p-gate to increase the barrier and prevent any leakage. The proposed alteration records an improved ION/IOFF ratio for JLTFET for a channel of width 20 nm.