دانلود رایگان مقاله جابجایی های لبه در سیلیکات دی کلسیم و تحلیل مربوط به اتم

عنوان فارسی
جابجایی های لبه در سیلیکات دی کلسیم: مشاهدات تجربی و تجزیه و تحلیل مربوط به اتم
عنوان انگلیسی
Edge dislocations in dicalcium silicates: Experimental observations and atomistic analysis
صفحات مقاله فارسی
0
صفحات مقاله انگلیسی
9
سال انتشار
2016
نشریه
الزویر - Elsevier
فرمت مقاله انگلیسی
PDF
کد محصول
E2914
رشته های مرتبط با این مقاله
مهندسی عمران
گرایش های مرتبط با این مقاله
سازه
مجله
تحقیقات سیمان و بتن - Cement and Concrete Research
دانشگاه
بخش مهندسی عمران و محیط زیست، دانشگاه رایس، هوستون، ایالات متحده
کلمات کلیدی
سیلیکات دی کلسیم (Ca2SiO4)، شبیه سازی اتم، جابجایی لبه، نقص کریستال
۰.۰ (بدون امتیاز)
امتیاز دهید
چکیده

Abstract


Understanding defects and influence of dislocations on dicalcium silicates (Ca2SiO4) is a challenge in cement science. We report a high-resolution transmission electron microscopy image of edge dislocations in Ca2SiO4, followed by developing a deep atomic understanding of the edge dislocation-mediated properties of five Ca2SiO4 polymorphs. By decoding the interplay between core dislocation energies, core structures, and nucleation rate of reactivity, we find that γ-C2S and α-C2S polymorphs are the most favorable polymorphs for dislocations in Ca2SiO4, mainly due to their large pore channels which take away majority of the distortions imposed by edge dislocations. Furthermore, in the context of edge dislocation, while α-C2S represents the most active polymorph for reactivity and crystal growth, β-C2S represents the most brittle polymorph suitable for grinding. This work is the first report on the atomistic-scale analysis of edge dislocation-mediated properties of Ca2SiO4 and may open up new opportunities for tuning fracture and reactivity processes of Ca2SiO4 and other cement components.

نتیجه گیری

4. Conclusion


We studied the atomic-scale characteristics of edge dislocation in 5 polymorphs of dicalcium silicate, as a class of complex low symmetry oxides. While our experimental TEM tests revealed a clear high-resolution image of edge dislocation in C2S, we performed extensive computations to provide an “atomistic lens” on edge dislocation characteristics. We found that γ-C2S and α-C2S polymorphs have the lowest core formation energies and thus the most favorable polymorphs for dislocations in dicalcium silicates, mainly due to their large pore channels and nearly rigid-body type movements of atoms, which take away majority of the distortions imposed by edge dislocations. Our results suggest that α-C2S crystal is the most reactive polymorph in dislocation-mediated crystal growth, consistent with previous reports. Furthermore, we identified β-C2S as the most brittle polymorph of belite in the context of edge dislocation. These basic knowledge of brittleness may influence micro cracking, brittleness and fracture of belite, and combined with other strategies such as use of polymers, may help devise strategies to reduce the energy associated with grinding dicalcium silicate (cement) clinkers. This information, in conjunction with the predicted nucleation rate of reactivity, core structures and displacement fields, can provide new physical insights and guiding hypotheses for experimentalist to tune the cement reactivity processes as well as grinding mechanisms. To our knowledge, this work is the first report of atomistic-scale analysis of edge dislocations in structurally complex dicalcium silicates, and can potentially open up new opportunities for further studies, such as mixed dislocation-mediated mechanisms, brittle-to-ductile transitions, and twinning deformations and their interactions with dislocations, to provide a comprehensive understanding of deformation mechanisms in cement clinkers. Broadly, the concepts, methods and strategies of this work can impact several other oxides and low symmetry crystals such as jennite [38], layered and hybrid calcium-silicate materials [71–75], as well as recently developed realistic and combinatorial models of calcium-silicate–hydrates [76–78] and microporous materials in general [79–80].


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