دانلود رایگان مقاله انگلیسی مسائل مربوط به مواد و پردازش در الکترونیک قدرت GaN عمودی - الزویر 2018

ABSTRACT

Silicon-based power devices are reaching their fundamental performance limit. The use of wide-bandgap semiconductors with superior material properties over silicon offers the potential for power electronic systems with much higher power densities and higher conversion efficiency. GaN, with a high critical electric field and carrier mobility, is considered one of the most promising candidates for future high-power, high frequency and high temperature applications. High voltage transistors and diodes based on both lateral and vertical structures are of great interest for future power electronics. Particularly, vertical GaN power devices have recently attracted increasing attention due to their many unique properties. This paper reviews recent progress and key remaining challenges towards the development of high-performance vertical GaN transistors and diodes with emphasis on the materials and processing issues related to each device architecture.

4. Conclusion

In this review, we summarized several key aspects of vertical GaN power electronics including material growth, device architectures, device physics, and processing issues. High-performance vertical GaN transistors and diodes have been demonstrated on free-standing GaN substrate and low-cost silicon wafer. With the advances in substrate technology and the optimization of the field engineering, vertical GaN power devices with breakdown voltage beyond 5 kV can be realized. There are however, very limited reliability studies on vertical devices so far. A careful study of the origin of the breakdown mechanism in these devices is also needed. The maturity of the substrate technology together with the optimization of the device processing will soon enable the commercialization of vertical GaN power devices.