Abstract
Mobile communication is one of the fastest growing markets and demands a significant part of the integrated circuit sales. In the past transceivers in the GHz range have required silicon bipolar transistors or even GaAs devices. With the scaling of CMOS technology commercial fabrication lines offer n-channel MOSFET devices with a transit frequency beyond 20 GHz for very large scale integrated circuits. This paper compares the high frequency characteristics of the MOSFET with the SiGe heterostructure bipolar transistor and the GaAs based HEMT for low noise applications.
