دانلود رایگان مقاله انگلیسی بررسی قابلیت اطمینان مبدل های DC-DC با بهره بالا بر اساس پیکربندی RRPP I-IIA - اشپرینگر 2018

عنوان فارسی
بررسی قابلیت اطمینان مبدل های DC-DC با بهره بالا بر اساس پیکربندی RRPP I-IIA برای سیستم قدرت کشتی
عنوان انگلیسی
Reliability study of high gain DC-DC converters based on RRPP I-IIA configuration for shipboard power system
صفحات مقاله فارسی
0
صفحات مقاله انگلیسی
16
سال انتشار
2018
نشریه
اشپرینگر - Springer
فرمت مقاله انگلیسی
PDF
کد محصول
E8866
رشته های مرتبط با این مقاله
مهندسی برق
گرایش های مرتبط با این مقاله
مهندسی الکترونیک، الکترونیک قدرت
مجله
Sådhanå
دانشگاه
EEE Department - SRM University - Kattankulathur - India
کلمات کلیدی
RRPP؛ I-IIA، بهره ولتاژ؛ تنش ولتاژ بهره وری؛ قابلیت اطمینان
چکیده

Abstract.


This paper examines the family of high gain DC-DC converter derived from I-IIA configuration, primarily based on Reduced Redundant Power Processing (RRPP). The primary intention of this study is to determine the best topology for high voltage applications. The steady-state analysis of the proposed topologies is investigated and verified. The denominators of the voltage conversion ratio are observed to be similar for all the derived topologies, and they are in quadratic form. A comprehensive assessment is done based on voltage gain, voltage stress across storage element, switch stress voltage, switch utilization factor and inductor value. The best topology is identified and analyzed thoroughly in Continuous Conduction Mode (CCM) and Discontinuous Conduction Mode (DCM). Also, its performance evaluation and reliability study are also carried out. The advantage of that topology is validated using theoretical and simulation results. Finally, 40 W prototype is developed to verify the results.

نتیجه گیری

8. Conclusion


A family of high step-up quadratic boost converter is proposed in this paper. All the topologies are derived by I-IIA structure with RRPP technique. Type-IV topology is the most compelling candidate within the derived one. Voltage conversion ratio is increased by increasing the VM cell. Subsequently, a model is made for the type-IV topology owing to its high gain. The ratings of the circuit elements such as the inductor and capacitor are lesser compared to other topologies. The diode and switch voltage stress are substantially low. Hence, the rating of semiconductor devices is reduced, and as a result of this, the converter cost reduces. The experimental results prove that the type-IV topology has higher voltage gain with reduced voltage stress across the semiconductor devices. The structure of the type-IV converter is simple, since the converter is nonisolated and it uses less inductance value. Thus the type-IV topology can be used fruitfully in several high voltage applications.


بدون دیدگاه