Abstract
This paper presents the modeling and simulation of a low voltage pentacene organic field effect transistor (OFET), which is based on experimental data using an integrated finite element and artificial neural networks (ANN) approach. We present a model of organic field effect transistor based on neural network, this approach allows an easy way to model devices without acquiring a deep knowledge the device physics. The finite element type simulation is realized using 2-D Atlas simulator, both Atlas and obtained modeling results agree approximately with the published experimental results.
